Advanced GaN and novel III-N devices for THz electronics; transport in III-N hetero-structures; novel devices utilizing new materials functionalities; energy-efficient, nano-electronics in emerging materials
The funding will contribute to advancements in artificial intelligence, clean energy, health care, cybersecurity and more.
Forbes referenced UB research, led by Uttam Singisetti, in an article on why gallium oxide can deliver a more sustainable future for artificial intelligence.
Mostafa Nouh, Uttam Singisetti, Jun Xia, Ziming Zhao and Shaofeng Zou have received 2024 University at Buffalo awards, recognizing sustained achievement and innovation in teaching.
A UB research team has been awarded a $2.8 million semiconductor grant to advance semiconductor technology that will modernize the nation’s power grid.
The project, funded by the Department of Energy, aims to help prevent blackouts, make electricity delivery more efficient.
The center aligns with the Buffalo-Rochester-Syracuse region being designated a federal tech hub under the CHIPS and Science Act in 2022.
An article on Engineering.com reports on UB research that may improve the design and efficiency of MOSFETs, or metal oxide semiconductor field-effect transistors. transistors and provide a breakthrough for electric vehicles.